MAC12N DATASHEET

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MAC12N. Основные параметры

Параметр Обозначение Величина Ед.изм.
Корпус TO-220AB

MAC12N - English Version

Поиск замены для MAC12N

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

MAC12N Datasheet. Страница #1

MAC12N
 datasheet

Страница #2

MAC12N
 datasheet #2

Описание

MAC12D, MAC12M, MAC12N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and commutating di/dt are required. http://onsemi.com Features TRIACS • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C 12 AMPERES RMS • Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 400 thru 800 VOLTS • High Immunity to dv/dt - 250 V/ms Minimum at 125