NTE5381 DATASHEET

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NTE5381. Основные параметры

Параметр Обозначение Величина Ед.изм.
Корпус TO-200AB

NTE5381 - English Version

Поиск замены для NTE5381

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

NTE5381 Datasheet. Страница #1

NTE5381
 datasheet

Страница #2

NTE5381
 datasheet #2

Описание

NTE5381 Silicon Controlled Rectifier (SCR) for High Speed Switching, 1200V, 400 Amp, TO200AB Features: D High di/dt with Soft Gate Control D High Frequency Operation D Low Dynamic Forward Voltage Drop D Low Switching Losses at High Frequency Applications: D Inverters for UPS, Induction Heating, and Motor Control D Choppers D Crowbars Voltage: Blocking State Maximums (TJ = +125°C, Note 1 unless otherwise specified) Repetitive Peak Forward Blocking Voltage, VDRM . . . . . . . . .