NYE08-10B6ST1G DATASHEET

ПОИСК DATASHEET

NYE08-10B6ST1G. Основные параметры

Параметр Обозначение Величина Ед.изм.
Корпус SOT-223

NYE08-10B6ST1G - English Version

Поиск замены для NYE08-10B6ST1G

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

NYE08-10B6ST1G Datasheet. Страница #1

NYE08-10B6ST1G
 datasheet

Страница #2

NYE08-10B6ST1G
 datasheet #2

Описание

NYE08-10B6ST1G Protected Triac Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com Features PROTECTED TRIAC • Sensitive Gate Trigger Current in Two Quadrants 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Surface Mount Package • Compliant with IEC6100-4-5 OUT COM • These are P