NYE08-10B6TG DATASHEET

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NYE08-10B6TG. Основные параметры

Параметр Обозначение Величина Ед.изм.
Корпус TO-92

NYE08-10B6TG - English Version

Поиск замены для NYE08-10B6TG

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

NYE08-10B6TG Datasheet. Страница #1

NYE08-10B6TG
 datasheet

Страница #2

NYE08-10B6TG
 datasheet #2

Описание

NYE08-10B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com Features PROTECTED TRIAC • One-Piece, Injection-Molded Package 0.8 AMPERE RMS • Blocking Voltage to 600 V 600 VOLTS • Sensitive Gate Triggering in Two Trigger Modes (Q