TIC108A SCR DATASHEET

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TIC108A. Основные параметры

Параметр Обозначение Величина Ед.изм.
Тип SCR
Корпус TO-220

TIC108A - English Version

Поиск замены для TIC108A

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

TIC108A Datasheet. Страница #1

TIC108A
 datasheet

Страница #2

TIC108A
 datasheet #2

Описание

SEMICONDUCTORS TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M, TIC108N, TIC108S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 5 A Continuous On-State Current • 20 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 1 mA • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) VRRM Rep