TIC126B Triac DATASHEET

ПОИСК DATASHEET

TIC126B. Основные параметры

Параметр Обозначение Величина Ед.изм.
Тип Triac
Корпус TO-220

TIC126B - English Version

Поиск замены для TIC126B

Символ Значение Ед.Изм.
Тип
PGM > W
VDRM > V
IT(AVR) > A
IT(RMS) > A
ITSM > A
dI/dt > A/µs
dV/dt > V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Корпус

TIC126B Datasheet. Страница #1

TIC126B
 datasheet

Страница #2

TIC126B
 datasheet #2

Описание

SEMICONDUCTORS TIC126A, TIC126B, TIC126C, TIC126D, TIC126E, TIC126M, TIC126N, TIC126S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 12 A Continuous On-State Current • 100 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 20 mA • Compliance to ROHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings Unit A B C D E M S N Repetitive peak off-state voltage VDRM 100 200 300 400 500 600 700 800 V (see Note1) VRRM